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CM1215
SPECIFICATIONS
Table 2. ABSOLUTE MAXIMUM RATINGS
Parameter
Operating Supply Voltage (V P ? V N )
Diode Forward DC Current (Note 1)
DC Voltage at any Channel Input
Operating Temperature Range
Ambient
Junction
Storage Temperature Range
Rating
6
20
(V N ? 0.5) to (V P +0.5)
? 40 to +85
? 40 to +125
? 40 to +150
Units
V
mA
V
° C
° C
° C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
Table 3. STANDARD OPERATING CONDITIONS
Parameter
Operating Temperature Range
Package Power Rating
SOT23 ? 3 Package (CM1215 ? 01SO)
SOT143 Package (CM1215 ? 02SR)
SOT23 ? 5 Package (CM1215 ? 02SO)
SOT23 ? 6 Package (CM1215 ? 04SO)
Table 4. ELECTRICAL OPERATING CHARACTERISTICS (Note 1)
Rating
–40 to +85
225
225
225
225
Units
° C
mW
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
V P
I P
Operating Supply Voltage (V P ? V N )
Operating Supply Current
(V P ? V N ) = 3.3 V
3.3
5.5
8
V
m A
V F
I LEAK
C IN
Diode Forward Voltage
Top Diode
Bottom Diode
Channel Leakage Current
Channel Input Capacitance
I F = 20 mA; T A = 25 ° C
T A = 25 ° C; V P = 5 V, V N = 0 V
At 1 MHz, V P = 3.3 V,
V N = 0 V, V IN = 1.65V;
0.6
0.6
0.8
0.8
± 0.1
1.6
0.95
0.95
± 1.0
2.0
V
m A
pF
Δ C IN
Channel I/O to GND Capacitance Difference
0.04
pF
C MUTUAL
V ESD
V CL
R DYN
Mutual Capacitance
ESD Protection
Peak Discharge Voltage at any channel input,
in system, contact discharge
per IEC 61000 ? 4 ? 2 standard
Channel Clamp Voltage
Positive Transients
Negative Transients
Dynamic Resistance
Positive transients
Negative transients
(V P ? V N ) = 3.3 V
T A = 25 ° C
(Notes 2 and 3)
I PP = 1 A, t P = 8/20 m S;
T A = 25 ° C;
I PP = 1 A, t P = 8/20 m S;
T A = 25 ° C;
± 15
0.13
V P +1.5
V N ? 1.5
0.4
0.4
pF
kV
V
W
1. All parameters specified at T A = ? 40 ° C to +85 ° C unless otherwise noted.
2. Standard IEC 61000 ? 4 ? 2 with C Discharge = 150 pF, R Discharge = 330 W , V P = 3.3 V, V N grounded.
3. From I/O pins to V P or V N only. V P bypassed to V N with low ESR 0.2 m F ceramic capacitor.
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